Also check out the EMP section of this:
You may be right, but it’s important to note that electric fields are distinct from magnetic fields in a few key cases, such as RFID implants. The magnetic component of the EMP blast reduces in magnitude at the inverse cube of the distance, whereas the electric component of the EMP blast reduces at the inverse square of the distance. In addition, the LC tank circuit in these implants acts as a band pass filter only allowing a small frequency range to enter the chip (from my VNA testing 13.56MHz ± 1.5MHz). There is also ESD protection built into the silicon die.